silicon crystal
英 [ˈsɪlɪkən ˈkrɪstl]
美 [ˈsɪlɪkən ˈkrɪstl]
网络 硅晶; 硅晶体
双语例句
- Numerical Analysis of Coil Step to Improve FZ Silicon Crystal Growth
线圈台阶对区熔硅单晶生长影响的数值计算分析 - Mr Noyce realised it would be possible for not just the transistor but capacitors and resistors an entire circuit to be etched on a single silicon crystal.
诺伊斯当时意识到，单个硅晶上不仅可以刻下晶体管，还可以容纳电容和电阻，即一个完整的电路。 - A high reverse bias voltage creates a strong internal electric field, which accelerates the electrons through the silicon crystal lattice and produces secondary electrons by impact ionization.
一个高反向偏置电压产生一个强有力的内部电场，加速了通过硅晶格的电子，并通过碰撞电离产生二次电子。 - The bulk of the silicon crystal, in fact, is simply a mechanical support for the active portion.
大多数硅单晶事实上是活动部分的机械支撑。 - White carbon black production from drained slurry generated by cutting silicon crystal using a wire-saw Study on the Deliming of Deserted Carbon Black in Making a Gas Process from Heavy Oils Burnt
线切割废砂浆中硅制取白炭黑的新工艺重油造气副产废弃炭黑灰分的脱除研究 - On the Formation of Nodular Silicon Crystal in the Zn Al Alloy Matrix Composites Reinforced by Silicon Phase
硅相增强锌铝基复合材料中团球硅晶体的形成 - Oxygen and carbon are important nonmetallic impurities in silicon crystals. Notably, the characteristics of silicon crystal are affected by them.
硅中碳和氧是重要的非金属杂质，它们对硅单晶的性质有着重要影响。 - Control of the Uniformity in Axial Oxygen Concentration in Czochralski Silicon Crystal Growth
直拉硅单晶中氧的轴向均匀性控制 - A novel piezoelectric micro gyroscope is designed and fabricated on silicon crystal, with an IC compatibe technology.
利用压电陶瓷的特性，采用IC兼容的技术，设计并制造了一种新颖的压电薄膜微型陀螺。 - A real 3-D continuous CA model is implemented based on the silicon crystal structure for silicon anisotropic etching.
建立了硅的各向异性腐蚀的3-D连续CA模型，对硅的各向异性腐蚀进行了模拟，对模拟的三维输出结果进行了理论分析，并将其与已有实验结果进行了对比。 - The results show that the nucleation and leading phase of silicon crystal depend on the solidification rate.
结果表明：在自由凝固下，作为生核与领先相的硅晶体形态与凝固速度密切相关。 - We measured the axial temperature gradient of the melt in different hot zone and found that the composite heat shield could increase the axial temperature gradient of the melt. This can improve crystal growth rate and silicon crystal quality.
本文测量了采用不同热屏热场的熔硅纵向温度梯度，发现加强复合式热屏使熔体纵向温度梯度增加，能有效的提高单晶的生长速率和晶体内在质量。 - Results indicate that growing along < 100> is inherent in silicon crystal.
结果表明：沿〈100〉生长是硅晶体固有的生长方式。 - P-type Silicon crystal plates have been adopted in the paper. Then the electrochemical etching experiments are done in three electrodes electrobath.
本文采用P型单晶硅片，在三极电解槽中，进行了电化学深刻蚀的探索性实验。 - Quantitative measurement for principal stresses σ_1 and σ_2 in silicon crystal is made with the infrared photoelastic equipment built by the authors.
根据光弹原理，用自己组建的红外光弹测量系统，对硅单晶中的主应力σ1和σ2进行了定量测量。 - Positron lifetime change during isochronal annealing of hydrogen FZ silicon crystal
氢气氛区熔硅单晶等时退火过程中的正电子寿命谱研究 - Local Mode and the Infrared Absorption of Substitutional Carbon in Silicon Crystal
代位式碳在硅单晶中的局域模与红外吸收 - When they arrange alternatively in space, the central Si atoms can keep the tetrahedron structure, which is in a good agreement with the real structure of silicon crystal.
Fe原子和Si原子按照这种方式在空间交替排列时，位于中心的Si原子仍保持为正四面体结构，这与硅晶体的实际结构是相吻合的。 - The oxygen precipitation ( OP) in heavily Sb-doped silicon crystal has been investigated.
本文用化学腐蚀和透射电镜及其能谱分析研究了重掺Sb硅单晶中的氧沉淀。 - Based on heavily As doped silicon crystal manufacturing process, boron distribution in the silicon crystal should be uniform. Furthermore, n/ n~+ epitaxy silicon wafers manufactured by such kind of silicon crystal exhibits good quality with the specifications.
按重掺砷硅单晶制备工艺过程，硼在硅单晶中的分布应该是非常均匀的，而且存在这种硼浓度分布的异常硅单晶加工生产的n/n+外延片并没有出现质量问题。 - Abnormal Phenomena of Trace Boron in Heavily As Doped Silicon Crystal Using Second Ion Mass Spectrometry Analysis
重掺砷硅单晶中痕量硼二次离子质谱定量分析的异常现象 - Adding Na element would cause the growth velocity of silicon crystal to quicken.
钠元素的变质作用可能在于改变硅晶体生长环境促使晶体生长速度加快，超过临界生长速度值，迫使共晶硅晶体的形态发生改变。 - Along with the fast development of ultra large scale integrated circuit ( ULSI), the manipulation of impurities and defects in the CZ silicon crystal has been increasingly stringent.
随着超大集成规模电路的发展，半导体产业界已经把研究的重点放在了如何控制和利用硅中的杂质和缺陷上，即所谓的缺陷工程。 - These major changes are based on the technological breakthrough of semiconductor silicon materials. Only semiconductor silicon material is made of single silicon crystal can it be used in the Integrated Circuit ( IC).
而这些重大变革都是以半导体硅材料的技术突破为基础的，半导体硅材料大都应该制备成硅单晶方可作为IC器件使用。 - Czochralski ( CZ) is an important method which growth single silicon crystal from melt.
Czochralski（CZ）方法是从熔体中生长单晶的重要方法之一。 - The results show that: ( 1) the direction of silicon nanowires is the same as silicon crystal wafer and the diameter of silicon nanowires depens on the resistivity of silicon.
对样品进行相关表征，结果表明：（1）硅纳米线阵列的生长方向与硅片的晶向相同，硅纳米线的直径与硅片的电阻率相关，且电阻率越大，硅纳米线的直径越大。 - This papers models and analyses the silicon crystal 100 surface reconstruction and relaxation with the molecular dynamics simulation and first principal theory abinitio calculation.
本文利用分子动力学模拟方法和量子物理从头算法，对单晶硅100表面的重构和弛豫进行模拟分析。 - At present, domestic scholars have been using phase-field method to simulate dendrite growth, dynamic recrystallization and single crystal growth, but using phase-field method to simulate the evolution of defects in single silicon crystal has not been reported.
目前，国内学者已经应用相场模型进行了枝晶长大、动态再结晶及单晶生长的模拟研究，但未见其用于单晶体缺陷模拟的报道。 - Possibly, this is due to the higher ionization energy of Si in pure silicon crystal, which limited the free electron generation in the Si plasma.
可能是由于在纯Si晶体中有较高的电离能，从而限制了Si等离子体中自由电子的形成。